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f2923 datasheet constant impedance k k | | z z | | sp2t rf switch 300 khz to 8000 mhz f2923, rev o 11/9/2015 1 ? 2015 integrated device technology, inc. g eneral d escription the f2923 is a low insertion loss 50 sp2t absorpti ve rf switch designed for a multitude of wireless and other rf applications. this device covers a broad frequency range from 300 khz to 8000 mhz. in addition to providing low insertion loss, industry leading isolation at 2 ghz and excellent linearity, the f2923 also includes a patent pending constant impedance (k z ) feature. k z minimizes lo pulling in vcos and reduces phase and amplitude variations in distribution networks. it is also ideal for dynami c switching/selection between two or more amplifiers while avoiding damage to upstream/downstream sensitive devices such as pas and adcs. the f2923 uses a single positive supply voltage of 3.3 v supporting three states using either 3.3 v or 1.8 v control logic. an added feature includes a modectl pin allowing the user to control the device with either 1pin or 2pin control. c ompetitive a dvantage the f2923 provides constant impedance on all ports during transitions without compromising isolation, linearity, or insertion loss. constant impedance k k | | z z | | during switching transition vswr rf_com port 1.4:1 vs. 9:1 for standard switch insertion loss = 0.48 db* iip3: +66 dbm* rf1/rf2 to rf_com isolation = 74 db* extended temperature: 55 c to +105 c negative supply voltage not required *2 ghz a pplications ? base station 2g, 3g, 4g ? portable wireless ? repeaters and e911 systems ? digital predistortion ? point to point infrastructure ? public safety infrastructure ? wimax receivers and transmitters ? military systems, jtrs radios ? rfid handheld and portable readers ? cable infrastructure ? wireless lan ? test / ate equipment f eatures ? constant impedance k k | | z z | | during transition ? very low insertion loss: 0.48 db @ 2 ghz ? high input ip3: 66 db @ 2 ghz ? rf1/rf2 to rf_com isolation: 74 db @ 2 ghz ? 1pin or 2pin device control option ? low dc current: 127 a using 3.3 v logic ? supply voltage: 3.3 v ? supports 1.8 v and 3.3 v control logic ? extended temperature: 55 c to +105 c ? 4 mm x 4 mm, 20pin tqfn package ? pin compatible with f2912 f unctional b lock d iagram rf2 rf1 rf_com ctl pins mode ctl 50 50 50 o rdering i nformation f2923ncgi8 green tape & reel rf p roduct line
f2923 constant impedance absorptive sp2t rf switch 2 rev o 11/9/2015 a bsolute m aximum r atings parameter / condition symbol min max unit vcc to gnd vcc 0.3 +3.9 v ctl1, ctl2 v cntl 0.3 vcc + 0.3 v modectl to gnd v mode 0.3 vcc + 0.3 v rf1, rf2, rf_com v rf 0.3 +0.3 v maximum junction temperature t jmax +140 c storage temperature range t st 65 +150 c lead temperature (soldering, 10s) t lead +260 c esd voltageC hbm (per jesd22a114) v esdhbm class 2 esd voltage C cdm (per jesd22c101) v esdcdm class iii abs m ax rf p ower at 2 gh z with t c = +85 c * rf1, rf2, rf_com (rf1 or rf2 is connected to rf_com , il states) +33dbm rf1, rf2, rf_com (when port is internally terminate d) +24dbm abs m ax rf p ower at 2 gh z with t c = +105 c * rf1, rf2, rf_com (rf1 or rf2 is connected to rf_com , il states) +33dbm rf1, rf2, rf_com (when port is internally terminate d) +21dbm * temperature of exposed paddle stresses above those listed above may cause permane nt damage to the device. functional operation of th e device at these or any other conditions above those indicated in the operational section of this specification i s not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. p ackage t hermal and m oisture c haracteristics ja (junction C ambient) 60 c/w jc (junction C case) the case is defined as the expose d paddle 3.9 c/w moisture sensitivity rating (per jstd020) msl1
f2923 rev o 11/9/2015 3 constant impedance absorptive sp2t rf switch f2923 r ecommended o perating c onditions parameter symbol conditions min typ max units supply voltage v cc 3.1 3.5 v operating temperature range t case case temperature 55 +105 o c rf frequency range f rf 0.3 8000 mhz rf continuous input power (cw) 1 p rf selected port (i.l. state) 27 dbm unselected port 2 (term state) 18 rf1 port impedance z rf1 50 rf2 port impedance z rf2 50 rf_com port impedance z rf_com 50 note 1C see figure 1 below for rf power handling l evels for various conditions. note 2C states 1, 2, or 3. f igure 1: m aximum o perating rf i nput p ower vs . rf f requency
f2923 constant impedance absorptive sp2t rf switch 4 rev o 11/9/2015 f2923 s pecification typical application circuit, v cc = +3.3 v, t c = +25 c, f rf = 2 ghz, input power = 0 dbm unless otherwise stat ed. pcb board trace and connector losses are deembedde d unless otherwise noted. parameter symbol conditions min typ max units logic input high threshold v ih ctl1 and ctl2 pins 1.1 3.6 v logic input low threshold v il ctl1 and ctl2 pins 0.6 v modectl input high vcc v modectl input low gnd v logic current i ih, i il ctl1, ctl2, modectl pins 1000 na dc current (vcc) i cc state 2 or state 3 127 150 a vswr during transition vswr t rf1/rf2 to rf_com 1.4:1 insertion loss rf1/rf2 to rf_com (state 2 or 3) il rf = 1 ghz 0.43 db rf = 2 ghz 0.48 0.8 1 rf = 4 ghz 0.63 rf = 6 ghz 0.89 rf = 8 ghz 1.12 isolation rf1 / rf2 to rf_com (state 2 or 3) iso1 rf = 1 ghz 77 db rf = 2 ghz 71 2 74 rf = 4 ghz 51 rf = 6 ghz 40 rf = 8 ghz 37 isolation rf1 to rf2 (state 2 or 3) iso2 rf = 1 ghz 73 db rf = 2 ghz 61 63 rf = 4 ghz 51 rf = 6 ghz 35 rf = 8 ghz 29 return loss rf_com (state 1) rl1 rf = 1 ghz 23.8 db rf = 2 ghz 25.2 rf = 4 ghz 26.7 rf = 6 ghz 18.4 rf = 8 ghz 16.6 return loss rf_com (state 2 or 3) rl2 rf = 1 ghz 29.6 db rf = 2 ghz 25.4 rf = 4 ghz 26.1 rf = 6 ghz 17.6 rf = 8 ghz 14.1 note 1C items in min/max columns in bold italics are guaranteed by test. note 2C items in min/max columns not in bold italic s are guaranteed by design characterization.
f2923 rev o 11/9/2015 5 constant impedance absorptive sp2t rf switch f2923 s pecification (c ont .) typical application circuit, v cc = +3.3 v, t c = +25 c, f rf = 2 ghz, input power = 0 dbm unless otherwise stat ed. pcb board trace and connector losses are deembedde d unless otherwise noted. parameter symbol conditions min typ max units return loss rf1, rf2 (state 1) rl3 rf = 1 ghz 22.6 db rf = 2 ghz 23.4 rf = 4 ghz 25.2 rf = 6 ghz 19.9 rf = 8 ghz 11.2 return loss rf1, rf2 when selected (state 2 or 3) rl4 rf = 1 ghz 33.7 db rf = 2 ghz 28.4 rf = 4 ghz 28.0 rf = 6 ghz 17.7 rf = 8 ghz 15.0 input ip2 rf1 / rf2 (state 2 or 3) iip2 p in = +13 dbm per tone rf = 1 ghz 116 dbm rf = 2 ghz 106 rf = 3 ghz 105 input ip3 rf1 / rf2 (state 2 or 3) iip3 p in =+13 dbm per tone rf = 1 ghz 66 dbm rf = 2 ghz 66 rf = 3 ghz 65 rf = 4 ghz 65 rf = 6 ghz 52 input 1db compression rf1 / rf2 (state 2 or 3) 3 ip1db rf = 2 ghz 32 dbm switching time 4 t sw 50% control to 90% rf 0.6 s 50% control to 10% rf 0.5 50% control to rf settled to within +/ 0.1 db of i.l. value. 0.675 maximum switching rate sw rate 25 khz maximum spurious level on any rf port 5 spur max rf ports terminated into 50? 137 dbm note 1C items in min/max columns in bold italics are guaranteed by test. note 2C items in min/max columns not in bold italic s are guaranteed by design characterization. note 3C the input 1db compression point is a linear ity figure of merit. refer to figure 1 above and recommended operating conditions sections for the maximum rf input powers. note 4C f rf = 2 ghz. note 5C spurious due to onchip negative voltage ge nerator. typical generator fundamental frequency is 2.2 mhz.
f2923 constant impedance absorptive sp2t rf switch 6 rev o 11/9/2015 table 1 includes 3 states and provides the truth ta ble for 2-pin control input. table 1 - switch control truth table for 3 states u sing 2 control pins; pin 16 and pin 17 state control pin input rf1, rf2 input / output ctl1 (pin 17) ctl2 (pin 16) rf1 to rf com rf2 to rf com 1 low low off off 2 low high off on 3 high low on off 4 high high n/a n/a table 2 includes 2 states and provides the truth ta ble for 1-pin control input. table 2 - switch control truth table for 2 states u sing a single control pin 16 state control pin input rf1, rf2 input / output ctl1 (pin 17) ctl2 (pin 16) rf1 to rf com rf2 to rf com 2 don't care high off on 3 don't care low on off table 3 provides the truth table for selecting the use of e ither 1 or 2 control pins. table 3 - mode control (pin 19) truth table to use either 1 or 2 control pins pin control mode modectl (pin 19) 2-pin control: ctl1 and ctl2 gnd 1-pin control: ctl2 vcc notes: 1. when rf1 and rf2 ports are both open (state 1), all 3 rf ports are terminated to an internal 50 termination resistor. 2. when rf1 or rf2 port is open (state 2 or state 3 off condition), the open port is connected to an i nternal 50 termination resistor. 3. when rf1 or rf2 port is closed (state 2 or state 3 on condition), the closed port is connected to t he rf_com port. t ypical o perating c urve c onditions unless otherwise noted, the following conditions apply: ? evkit loss deembedded for only insertion loss plot s. ? vcc = 3.3 v ? f rf = 2 ghz ? t amb = 25 o c ? small signal parameters measured with p in = 0dbm. ? two tone tests p in =+13 dbm/tone with 50 mhz tone spacing.
f2923 rev o 11/9/2015 7 constant impedance absorptive sp2t rf switch t ypical o perating c onditions (- 1 -) insertion loss vs. temperature isolation vs. temp [rf_com rf1 / rf2] isolation vs. temp [rf1 rf2, rf2 rf1] insertion loss vs. voltage isolation vs. voltage [rf_com rf1 / rf2] isolation vs. voltage [ rf1 rf2, rf2 rf1] -2 -1.6 -1.2 -0.8 -0.4 0 0 1 2 3 4 5 6 7 8 insertion loss (db) frequency (ghz) rf1 sel, -55c rf2 sel, -55c rf1 sel, 25c rf2 sel, 25c rf1 sel, 105c rf2 sel, 105c -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0 1 2 3 4 5 6 7 8 isolation (db) frequency (ghz) rf1 sel, - 55c rf2 sel, - 55c rf1 sel, 25c rf2 sel, 25c rf1 sel, 105c rf2 sel, 105c -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0 1 2 3 4 5 6 7 8 isolation (db) frequency (ghz) rf1 sel, -55c rf2 sel, -55c rf1 sel, 25c rf2 sel, 25c rf1 sel, 105c rf2 sel, 105c -2 -1.6 -1.2 -0.8 -0.4 0 0 1 2 3 4 5 6 7 8 insertion loss (db) frequency (ghz) rf1 sel, 3.1v rf2 sel, 3.1v rf1 sel, 3.3v rf2 sel, 3.3v rf1 sel, 3.5v rf2 sel, 3.5v -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0 1 2 3 4 5 6 7 8 isolation (db) frequency (ghz) rf1 sel, 3.1v rf2 sel, 3.1v rf1 sel, 3.3v rf2 sel, 3.3v rf1 sel, 3.5v rf2 sel, 3.5v -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0 1 2 3 4 5 6 7 8 isolation (db) frequency (ghz) rf1 sel, 3.1v rf2 sel, 3.1v rf1 sel, 3.3v rf2 sel, 3.3v rf1 sel, 3.5v rf2 sel, 3.5v
f2923 constant impedance absorptive sp2t rf switch 8 rev o 11/9/2015 t ypical o perating c onditions (- 2 -) rf1 return loss vs. temperature rf2 return loss vs. temperature rf _ com return loss vs. temperature rf1 return loss vs. voltage rf2 return loss vs. voltage rf _ com return loss vs. voltage -40 -35 -30 -25 -20 -15 -10 -5 0 0 1 2 3 4 5 6 7 8 return loss (db) frequency (ghz) rf1 sel, -55c rf2 sel, -55c rf1 sel, 25c rf2 sel, 25c rf1 sel, 105c rf2 sel, 105c -40 -35 -30 -25 -20 -15 -10 -5 0 0 1 2 3 4 5 6 7 8 return loss (db) frequency (ghz) rf1 sel, -55c rf2 sel, -55c rf1 sel, 25c rf2 sel, 25c rf1 sel, 105c rf2 sel, 105c -40 -35 -30 -25 -20 -15 -10 -5 0 0 1 2 3 4 5 6 7 8 return loss (db) frequency (ghz) rf1 sel, -55c rf2 sel, -55c rf1 sel, 25c rf2 sel, 25c rf1 sel, 105c rf2 sel, 105c -40 -35 -30 -25 -20 -15 -10 -5 0 0 1 2 3 4 5 6 7 8 return loss (db) frequency (ghz) rf1 sel, 3.1v rf2 sel, 3.1v rf1 sel, 3.3v rf2 sel, 3.3v rf1 sel, 3.5v rf2 sel, 3.5v -40 -35 -30 -25 -20 -15 -10 -5 0 0 1 2 3 4 5 6 7 8 return loss (db) frequency (ghz) rf1 sel, 3.1v rf2 sel, 3.1v rf1 sel, 3.3v rf2 sel, 3.3v rf1 sel, 3.5v rf2 sel, 3.5v -40 -35 -30 -25 -20 -15 -10 -5 0 0 1 2 3 4 5 6 7 8 return loss (db) frequency (ghz) rf1 sel, 3.1v rf2 sel, 3.1v rf1 sel, 3.3v rf2 sel, 3.3v rf1 sel, 3.5v rf2 sel, 3.5v
f2923 rev o 11/9/2015 9 constant impedance absorptive sp2t rf switch t ypical o perating c onditions (- 3 -) isolation vs. temp [ all off state, rf_com driven ] rf_com return loss [ all off state ] vs. temp return loss (during switching) vs. time isolation vs. voltage [ all off state, rf_com driven ] rf_com return loss [ all off state ] vs. voltage vswr (during switching) vs. time -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0 1 2 3 4 5 6 7 8 isolation (db) frequency (ghz) rf1 out, -55c rf2 out, -55c rf1 out, 25c rf2 out, 25c rf1 out, 105c rf2 out, 105c -40 -35 -30 -25 -20 -15 -10 -5 0 0 1 2 3 4 5 6 7 8 return loss (db) frequency (ghz) -55c 25c 105c -35 -30 -25 -20 -15 -10 -5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 return loss (db) time (sec) rf1 ( rf1 term to rfcom ) or rf2 ( rf2 term to rfcom ) rf1 ( rfcom to rf1 term ) or rf2 ( rfcom to rf2 term ) rfcom ( rf1 to rf2 ) or rfcom ( rf2 to rf1 ) 50% ctrl at t= t 0 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0 1 2 3 4 5 6 7 8 isolation (db) frequency (ghz) rf1 out, 3.1v rf2 out, 3.1v rf1 out, 3.3v rf2 out, 3.3v rf1 out, 3.5v rf2 out, 3.5v -40 -35 -30 -25 -20 -15 -10 -5 0 0 1 2 3 4 5 6 7 8 return loss (db) frequency (ghz) 3.1v 3.3v 3.5v 1 1.2 1.4 1.6 1.8 2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 vswr time (sec) rf1 ( rf1 term to rfcom ) or rf2 ( rf2 term to rfco m ) rf1 ( rfcom to rf1 term ) or rf2 ( rfcom to rf2 ter m ) rfcom ( rf1 to rf2 ) or rfcom ( rf2 to rf1 ) 50% ctrl at t= t 0
f2923 constant impedance absorptive sp2t rf switch 10 rev o 11/9/2015 t ypical o perating c onditions (- 4 -) switching time tc=25c [ rf_com driven, rf1 to rf2 ] switching time tc=-40c [ rf_com driven, rf1 to rf2 ] compression [1 ghz, 2 ghz, rf1, rf2] switching time tc=25c [ rf_com driven, rf2 to rf1 ] switching time tc=-40c [ rf_com driven, rf2 to rf1 ] input ip3 [1 ghz] -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 amplitude (v) time (sec) rf1 on to off rf2 off to on ctl2 switched low to high at t = t 0 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 amplitude (v) time (sec) rf1 on to off rf2 on to off ctl2 switched low to high at t = t 0 -2 -1.5 -1 -0.5 0 0.5 22 24 26 28 30 32 34 36 loss compression (db) input power (dbm) rf1, 1ghz rf2, 1ghz rf1, 2ghz rf2, 2ghz -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 amplitude (v) time (sec) rf2 on to off rf1 off to on ctl2 switched high to low at t = t 0 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 amplitude (v) time (sec) rf2 on to off rf1 off to on ctl2 switched high to low at t = t 0 40 45 50 55 60 65 70 75 80 3.1 3.2 3.3 3.4 3.5 input ip3 (dbm) vcc (v) - 55c / rf1 25c / rf1 105c / rf1 -55c / rf2 25c / rf2 105c / rf2
f2923 rev o 11/9/2015 11 constant impedance absorptive sp2t rf switch t ypical o perating c onditions (- 5 -) input ip3 [2 ghz] input ip3 [3 ghz] 40 45 50 55 60 65 70 75 80 3.1 3.2 3.3 3.4 3.5 input ip3 (dbm) vcc (v) - 55c / rf1 25c / rf1 105c / rf1 -55c / rf2 25c / rf2 105c / rf2 40 45 50 55 60 65 70 75 80 3.1 3.2 3.3 3.4 3.5 input ip3 (dbm) vcc (v) - 55c / rf1 25c / rf1 105c / rf1 -55c / rf2 25c / rf2 105c / rf2
f2923 constant impedance absorptive sp2t rf switch 12 rev o 11/9/2015 p ackage d rawing (4 mm x 4 mm 20pin tqfn), ncg20
f2923 rev o 11/9/2015 13 constant impedance absorptive sp2t rf switch l and p attern d imension
f2923 constant impedance absorptive sp2t rf switch 14 rev o 11/9/2015 p in d iagram gnd ctl2 16 17 ctl1 18 n.c. 19 20 v cc 1 4 3 2 5 gnd gnd 11 gnd gnd gnd rf_com gnd 6 7 8 9 10 rf2 15 12 13 gnd 14 gnd rf1 gnd gnd control circuit modectl e.p. n.c. 50 50 50 p in d escription pin name function 1, 2, 4, 5, 6, 7, 9, 10, 11, 12, 14 gnd ground these pins. 3 rf1 rf1 port. matched to 50 . if this pin is not 0v dc, then an external coupling capacitor must be used. 8 rf_com rf common port. matched to 50 . if this pin is not 0v dc, then an external coupling capacitor must be used. 13 rf2 rf2 port. matched to 50 . if this pin is not 0v dc, then an external coupling capacitor must be used. 15 n.c. no internal connection. this pin can be lef t open or connected to ground. 16 ctl2 control 2 C see table 1 and table 2 switch control truth tables for proper logic setting. 17 ctl1 control 1 C see table 1 and table 2 switch control truth tables for proper logic setting. 18 n.c. no internal connection. 19 modectl mode control C see table 3 mode control truth table . apply vcc to select 1pin control or gnd for 2pin control. 20 vcc power supply. bypass to gnd with capacitors shown i n the typical application circuit as close as possible to pin. 21 ep exposed pad. internally connected to gnd. solder th is exposed pad to a pcb pad that uses multiple ground vias to provide h eat transfer out of the device into the pcb ground planes. these multiple g round vias are also required to achieve the specified rf performance.
f2923 rev o 11/9/2015 15 constant impedance absorptive sp2t rf switch a pplications i nformation default start-up control pins include no internal pulldown resistor s to logic low or pullup resistors to logic high. upon start up, all control pins should be set to logic low (0) thereby enabling 2pin switch control, opening bot h rf1 and rf2 paths, and setting logic control voltage to 3.3 v (see above tables for low logic states). power supplies a common vcc power supply should be used for all pi ns requiring dc power. all supply pins should be bypassed with external capacitors to minimize noise and fast transients. supply noise can degrade nois e figure and fast transients can trigger esd clamps and caus e them to fail. supply voltage change or transients should have a slew rate smaller than 1 v / 20 s. in addi tion, all control pins should remain at 0 v (+/0.3 v) while the supply voltage ramps or while it returns to zer o. control pin interface if control signal integrity is a concern and clean signals cannot be guaranteed due to overshoot, unde rshoot, ringing, etc., the following circuit at the input o f each control pin is recommended. this applies to control pins 16, 17, and 19 as shown below. modectl 16 17 18 19 20 1 4 3 2 5 11 6 7 8 9 10 15 12 13 14 control circuit 5k ohm 2pf 5k ohm 2pf 5k ohm 2pf ctl1 ctl2 50 50 50
f2923 constant impedance absorptive sp2t rf switch 16 rev o 11/9/2015 e v k it p icture top view bottom view
f2923 rev o 11/9/2015 17 constant impedance absorptive sp2t rf switch ev kit / a pplications c ircuit
f2923 constant impedance absorptive sp2t rf switch 18 rev o 11/9/2015 evk it bom part reference qty description mfr. part # mfr. c1 1 10 0 nf 10%, 50v, x7r ceramic capacitor (0603 ) grm188r71h104k murata c2 1 1000 pf 5%, 50v, c0g, ceramic capacitor (0402) grm1555c1h102j murata c3, c4 , c6 3 100 pf 5%, 50v, c0g, ceramic capacitor (0402) GRM1555C1H101J murata r2, r3, r4 , r5 4 0 ? , 1/10w, resistor (0402) erj 2ge0r00x panasonic r 6 0 not installed (0402) r 7, r8, r10 3 1 00k ? 1%, 1/10w, resistor (0402) erj 2rkf1003 x panasonic j1 j 5 5 edge launch sma (0.375 inch pitch ground tabs) 142 0701 851 emerson johnson j8 1 conn header vert dbl 8 x 2 pos gold 67997 116hlf fci vcc, gnd, gnd1 3 test point 5021 keystone electronics u1 1 sp2 t switch 4 mm x 4 mm qfn20 ep f2923ncgi idt 1 printed circuit board f2923 evkit rev 0 1 idt t op m arkings idtf29 23ncgi z518bjg part number date code [yww] (week 18 of 2015) lot code asm test step assembler code
f2923 rev o 11/9/2015 19 constant impedance absorptive sp2t rf switch ev kit o peration pcb rf connectors the f2923 evkit is a thin multilayer board (0.032 total thickness) designed using rogers 4350 high r f performance material. since this substrate is not a s rigid as standard fr4, one must take care when ma king connections to the board to avoid physically damagi ng the board. it is suggested that the body of the connector be restrained while tightening the rf connectors so to not put stress on the pcb material. external supply setup set up a vcc power supply in the voltage range of 3 .1 v to 3.5 v and disable the power supply output. logic control setup using the evkit to manually set the control logic: to setup the part for two pin logic control connect a 2pin shunt from pin 3 (modectl) to pin 4 (gnd) on connector j8. for one pin logic control leave j8 pin 3 open. an o nboard pullup resistor r10 will connect the modec tl pin to vcc to provide the logic high for one pin co ntrol. the pcb includes 2 pullup resistors (r7, r8) to vc c to provide a logic high for ctl1 and ctl2 respectively. installing a 2pin shunt from pin 7 ( ctl1) to pin 8 (gnd) of j8 will provide a logic low for manual control of the ctl1 pin. placing a 2pin shu nt from pin 9 (ctl2) to pin 10 (gnd) of j8 will res ult in a logic low for the ctl2 pin. see tables 1, 2 and 3 for control details. resistor r6 along with the 1.8vsel, 1.8vsel2, and l ogicctl pins are not used on the f2923 evkit. using external control logic: to setup the part for two pin logic control connect a 2pin shunt from pin 3 (modectl) to pin 4 (gnd) on connector j8. for one pin control leave pin 3 (modectl) of j8 ope n. in this configuration the modectl pin will be pulled up to vcc on the pcb through resistor r10. turn on procedure setup the supplies and eval board as noted in the external supply setup and logic control setup sections above. connect the preset/ disabled vcc power supply to th e vcc and gnd loops on the pcb. if controlling ctl1 and ctl2 with external logic t hen set these to logic low. enable the vcc supply. set the desired logic setting using ctl1, and ctl2 table 1 or table 2 setting. note that external cont rol logic should not be applied without vcc being appli ed first. for manual logic control the j8 connector ctl1 and ctl2 pins can be grounded to a neighboring ground for a logic low or left open for a logic high. turn off procedure if using external control logic for ctl1, ctl2 then set them to a logic low. disable the vcc supply.
f2923 constant impedance absorptive sp2t rf switch 20 rev o 11/9/2015 r evision h istory s heet rev date page description of change o 2015nov9 initial release
f2923 rev o 11/9/2015 21 constant impedance absorptive sp2t rf switch corporate headquarters 6024 silver creek valley road san jose, ca 95138 usa sales 1-800-345-7015 or 408-284-8200 fax: 408-284-2775 www.idt.com tech support http://www.idt.com/support/technical-support disclaimer integrated device technology, inc. (idt) reserves the right to modify the products and/or sp ecifications described herein at any time, without notice, at idts sole discretion. performance specifications and operating parameters of the described products are determined in an ind ependent state and are not guaranteed to perform th e same way when installed in customer products. the information contained herein is prov ided without representation or warranty of any kind , whether express or implied, including, but not li mited to, the suitability of idts products for any particular purpose, an implied warranty of merc hantability, or noninfringement of the intellectua l property rights of others. this document is pres ented only as a guide and does not convey any license under intellectual property rights of idt o r any third parties. idts products are not intended for use in applicat ions involving extreme environmental conditions or in life support systems or similar devices where th e failure or malfunction of an idt product can be reasonably expected to significantly affect the health or safety of users. anyone using an idt pro duct in such a manner does so at their own risk, ab sent an express, written agreement by idt. integrated device technology, idt and the idt logo are trademarks or registered trademarks of idt and its subsidiaries in the united states and other cou ntries. other trademarks used herein are the property of idt or their respective third party owners. copyright ?2015. integrated device technology, inc. all rights reserved.

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